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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:44-SOJ
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The IDT71V416L12YG is a 4-Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V. The device features a parallel interface and offers a maximum access time of 12 ns. It is housed in a 44-lead Small Outline J-Lead (SOJ) surface-mount package, specifically the 44-BSOJ variant measuring 0.400 inches wide. The component supports an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Fully static asynchronous circuitry requiring no clock signals or periodic refresh cycles for operation.
- Bidirectional inputs and outputs are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration designed to minimize noise and improve signal integrity.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded systems
- Data storage in industrial control units
Procurement Notes
Verify RoHS compliance status carefully, as historical records indicate variations between lead-free and non-compliant versions for this part number. Confirm the specific suffix indicates the correct package type and temperature grade. Check for End-of-Life (EOL) notifications or Product Change Notices (PCN) regarding manufacturing site transfers or label changes. Ensure the supplier provides valid traceability documentation for the specific lot code.
Selection Notes
Select this component when a 256K x 16 organization is required with 12 ns speed performance. It is suitable for designs needing LVTTL compatibility and center power/ground pins. Compare against the 71V416S12 series if commercial temperature grades suffice, or consider alternative packages like TSOP if board space constraints differ. Verify that the 3.3V supply rail matches the system architecture.
Part Context
This part belongs to the Renesas 71V416 family of CMOS SRAMs, originally developed under the Integrated Device Technology (IDT) brand before acquisition. The family includes variants with different access speeds and temperature ranges. The 'L' suffix typically denotes the lower voltage 3.3V operation, while 'YG' specifies the SOJ package and lead-free composition where applicable.
Replacement Considerations
Publicly confirmed substitute part numbers include 71V416S12YG and 71V416S12YGI8. These alternatives share similar electrical characteristics but may differ in temperature range or moisture sensitivity levels. Verify pinout compatibility and package dimensions before substitution.
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