71V416L12YG8

Overview

The IDT71V416L12YG8 is a 4-Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 12 ns and operates within a supply voltage range of 3.0 V to 3.6 V. The device is housed in a 44-lead SOJ package designed for surface-mount installation. It supports an operating temperature range of 0°C to 70°C and has a moisture sensitivity level of MSL 3.

Feature Summary

• Asynchronous parallel SRAM architecture providing fast data access
• Surface-mount 44-lead SOJ package configuration
• Standard 3.3 V CMOS operation

Applications

• High-speed data buffering in electronic systems
• Cache memory implementation in embedded controllers
• General-purpose volatile storage in industrial equipment

Procurement Notes

Verify component authenticity through authorized distributors due to discontinuation status. Confirm RoHS compliance requirements as specific suffixes may vary. Check for updated datasheets from Renesas Electronics Corporation to ensure compatibility with current design specifications and environmental regulations.

Selection Notes

Select this component for applications requiring 4-Mbit capacity with 12 ns speed in a 44-SOJ form factor. Ensure the design accommodates 3.3 V logic levels and standard asynchronous timing constraints. Consider physical space limitations imposed by the SOJ package dimensions during PCB layout planning.

Part Context

This part belongs to the IDT 71V416 family of high-performance asynchronous SRAMs. It shares architectural similarities with other variants like the 71V416S series but differs in package type and specific electrical characteristics. The L suffix typically denotes lead-free or specific packaging variations within the product line.

Replacement Considerations

Official substitutes include IDT71V416S12YG8 and IDT71V416S12Y. Verify pinout compatibility and electrical parameters before substitution.