71V416L12YGI8

Overview

The Renesas Electronics Corporation 71V416L12YGI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V CMOS supply with a voltage range of 3.0V to 3.6V. The device features a 12 ns access time and utilizes parallel interface technology. It is housed in a 44-pin SOJ package designed for surface-mount installation. The component supports an operating temperature range from -40°C to +85°C and includes LVTTL-compatible bidirectional inputs and outputs.

Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation
• Single 3.3V power supply operation with LVTTL-compatible I/O levels
• Center power and ground pinout configuration for improved signal integrity

Applications

• Asynchronous data buffering in embedded systems
• Cache memory implementation in industrial control units
• Data storage in telecommunications equipment

Procurement Notes

Verify the current lifecycle status, as this component may be discontinued or subject to limited availability. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Ensure the specific suffix YGI8 matches the required 44-SOJ package and lead-free specifications for your manufacturing process.

Selection Notes

Select this part when a 256K x 16 organization is required with 12 ns speed at 3.3V. Consider the 44-SOJ package constraints for board layout. Compare against the 71V416S12YGI8 variant if different electrical characteristics or packaging options are needed within the same family.

Part Context

This SRAM belongs to the 71V416L series, which provides high-density memory solutions in compact packages. The 'L' designation typically indicates low-power variants within the broader 71V416 product line. It serves as a direct replacement for legacy IDT devices with equivalent pinouts and electrical specifications.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT71V416L12YGI8.