71V416L15BEI

Overview

The Renesas Electronics Corporation 71V416L15BEI is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) integrated circuit. It features a parallel interface with a maximum access time of 15 ns and operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a 48-CABGA (9x9 mm) surface-mount package and supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture for high-speed data storage
• Industrial-grade wide temperature operational capability
• CMOS technology optimized for low power consumption

Applications

• Embedded systems requiring fast local data buffering
• Industrial control equipment operating in extreme temperatures
• Telecommunications infrastructure hardware

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as specific listings indicate non-compliance. Check moisture sensitivity level handling requirements before assembly. Validate lead-free soldering compatibility if required by final product specifications.

Selection Notes

Select this component when a 15 ns access speed is sufficient for the target application. Ensure the design accommodates the 48-pin CABGA footprint and thermal dissipation needs. Verify that the 3.3 V logic levels match the system bus requirements. Consider end-of-life status when planning long-term production runs.

Part Context

This part belongs to the Renesas 71V416 series, which provides various speed grades and package options for 4 Mbit SRAM applications. The 'L' suffix typically denotes lower power variants or specific speed bins within the family. The BEI suffix indicates the specific CABGA package and temperature grade configuration.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V416L15BEG.