— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 48CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-TFBGA
- Supplier Device Package:48-CABGA (9x9)
- Access Time:15 ns
- Grade:-
- Qualification:-
Download product information
Overview
The Renesas Electronics Corporation 71V416L15BEI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3 V power supply with a voltage range of 3.0 V to 3.6 V. The device features a 15 ns access time and utilizes a parallel interface. It is housed in a 48-CABGA (9x9 mm) surface-mount package. The component supports an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Fully static asynchronous operation requiring no clock signals or periodic refresh cycles for data retention.
- Bidirectional I/O pins are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration designed to optimize signal integrity and reduce noise.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded processing systems
- Data storage within industrial control units
Procurement Notes
Verify the specific suffix 'I8' against official Renesas documentation to confirm package and environmental specifications. Confirm RoHS compliance status as legacy variants may differ. Check current lifecycle status, as this part number may be discontinued or subject to last-time buy restrictions. Ensure moisture sensitivity level handling protocols are followed during assembly.
Selection Notes
Select this component when a 256K x 16 organization is required with 15 ns speed performance. It is suitable for designs needing center power/ground pinouts for improved electrical characteristics. Consider the 48-CABGA package constraints for PCB layout. Verify that the 3.3 V supply rail matches the system architecture requirements.
Part Context
This SRAM belongs to the Renesas 71V416 family, which provides high-density static memory solutions. The family includes various access speeds and package options tailored for different performance and form-factor needs. These devices are widely used in applications demanding reliable, fast volatile memory storage without complex controller overhead.
Replacement Considerations
Official substitutes include the 71V416L15BEG. Verify compatibility regarding package dimensions and pin assignments before replacement.
ChipApex | Global Electronic Components Supplier







