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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:15 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416L15PHG is a static random-access memory (SRAM) integrated circuit with a total storage capacity of 4 megabits. The device is organized as 256 kilowords by 16 bits and utilizes an asynchronous parallel interface for data transfer. It operates within a supply voltage range of 3.0 volts to 3.6 volts, with a maximum power consumption of 160 milliamperes. The component features a typical access time of 15 nanoseconds and is housed in a 44-pin thin small-outline package (TSOP). It supports surface-mount technology installation.
Feature Summary
- Asynchronous parallel operation for standard memory interfacing
- CMOS technology ensuring low power consumption during active use
- Single data rate architecture for straightforward system integration
Applications
- General-purpose volatile data storage in embedded systems
- Buffering applications in high-speed digital circuits
- Cache memory implementation in microcontroller-based designs
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm pin compatibility and electrical characteristics. Confirm RoHS compliance status through current datasheets, as manufacturing processes may evolve. Check for product change notifications regarding package updates or material substitutions before finalizing procurement plans.
Selection Notes
Select this component when a 4-megabit asynchronous SRAM with a 16-bit word width is required. Ensure the design accommodates the 3.0-volt to 3.6-volt operating range and the 15-nanosecond access speed. Verify that the 44-pin TSOP footprint aligns with the printed circuit board layout constraints.
Part Context
This part belongs to the 71V416L series of static random-access memories produced by Renesas Electronics. The series provides various access speeds and packaging options to suit different performance and space requirements in electronic devices. The L-series typically denotes specific package types and temperature ranges within the broader product family.
Replacement Considerations
Consult official substitution lists for equivalent parts from Renesas or other manufacturers. Verify that any replacement maintains the same memory organization, voltage specifications, and physical package dimensions.
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