71V416L15YG

Overview

The IDT71V416L15YG is a high-speed Static RAM fabricated using CMOS technology. It provides a memory density of 4,194,304 bits, organized as 256K words by 16 bits. The device features an asynchronous parallel interface with a maximum access time of 15 ns. It operates within a supply voltage range of 3.0 V to 3.6 V and supports surface-mount installation in a 44-BSOJ package.

Feature Summary

• High-speed asynchronous static random-access memory architecture
• CMOS fabrication for high reliability and performance
• Parallel data interface configuration

Applications

• General-purpose high-speed data storage
• Buffering applications in electronic systems
• Cache memory implementations

Procurement Notes

Verify component authenticity through authorized Renesas Electronics Corporation channels. Confirm RoHS compliance status, as documentation indicates variations across manufacturing sites. Validate package integrity upon receipt. Check for product discontinuance notices or end-of-life declarations prior to procurement planning.

Selection Notes

Select this component for designs requiring 4 Mbit capacity with 16-bit word width. Ensure the system accommodates the 44-BSOJ package dimensions. Verify that the operating environment remains within the specified temperature range. Confirm power supply stability within the 3.0 V to 3.6 V limits for proper functionality.

Part Context

This part belongs to the IDT71V416 family of 3.3V CMOS Static RAMs. The manufacturer, originally Integrated Device Technology, is now part of Renesas Electronics Corporation. The series offers various speed grades and package options for different system requirements.

Replacement Considerations

Officially documented substitutes include the 71V416S15PHG from Renesas Electronics Corporation.