71V416S10BE

Overview

The IDT71V416S10BE is a 4Mbit parallel asynchronous SRAM memory IC manufactured by Integrated Device Technology Inc. It features a 256K x 16 organization with a 10 ns access time and write cycle time. The device operates on a 3V to 3.6V supply voltage and is housed in a 48-CABGA (9x9) surface-mount package. It supports a working temperature range of 0°C to 70°C.

Feature Summary

• High-speed asynchronous parallel interface for efficient data transfer
• CMOS technology ensuring high performance and reliability
• Single 3.3V power supply operation

Applications

• General-purpose high-speed memory storage
• Embedded systems requiring fast random access
• Industrial control applications

Procurement Notes

Verify component authenticity due to potential obsolescence or lifecycle changes. Confirm RoHS compliance status as historical records may vary. Ensure the 48-CABGA package dimensions match your PCB footprint requirements. Check for specific manufacturing date codes if long-term stability is critical for your deployment.

Selection Notes

Select this part for designs requiring 4Mbit capacity with 10ns speed in a compact BGA form factor. Compare against the IDT71V416L10Y variant which shares similar electrical characteristics but may differ in package type or revision. Ensure system voltage rails align with the 3V to 3.6V operating range before integration.

Part Context

This component belongs to the IDT71V416 family of 4 Megabit Static RAMs. It is fabricated using high-performance CMOS technology. The series typically includes variants like the IDT71V416S10Y and IDT71V416L10Y, offering different package options such as SOJ or CABGA while maintaining consistent memory architecture and speed specifications.

Replacement Considerations

IDT71V416L10Y is a documented substitute within the same product family.