71V416S10BE

Overview

The Renesas Electronics Corporation 71V416S10BE is a high-speed CMOS Static RAM organized as 256K x 16, providing a total storage capacity of 4 Mbit. It operates on a single 3.3V supply with a voltage range of 3.0V to 3.6V and features a 10 ns access time. The device utilizes a parallel interface and is housed in a 48-CABGA package. It supports an industrial operating temperature range from 0°C to +70°C.

Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation.
• LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing.
• JEDEC center power and ground pinout configuration designed to reduce switching noise.

Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in microprocessor architectures
• Industrial control system data storage

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and temperature rating. Confirm RoHS compliance status and moisture sensitivity level prior to integration. Ensure the source provides valid datasheets matching the exact part number to avoid functional mismatches.

Selection Notes

Select this component when a 4 Mbit non-volatile buffer is required with 10 ns speed at 3.3V. The CABGA package suits surface-mount designs needing reduced noise through centered power pins. Verify that the 0°C to 70°C range meets the target environment requirements.

Part Context

This part belongs to the 71V416 family of 4 Mbit SRAMs. Variants differ by access speed, package style, and operating temperature range. The 'S' designation typically indicates the commercial temperature grade within this product line.

Replacement Considerations

Public confirmed substitutes include the 71V416L10PHG for extended temperature ranges and different packages. Cross-reference electrical parameters carefully before substitution.