71V416S10BEG

Overview

The Renesas Electronics Corporation 71V416S10BEG is a high-speed Static RAM organized as 256K x 16 bits, providing a total storage capacity of 4 Mbit. It operates on a single 3.3V CMOS power supply with a voltage range of 3.0V to 3.6V. The device features a maximum access time of 10 ns and supports asynchronous parallel interface operations. It is housed in a 48-CABGA surface-mount package and functions within an operating temperature range of 0°C to +70°C.

Feature Summary

• High-speed asynchronous memory operation with 10 ns access time
• CMOS technology optimized for low power consumption at 3.3V
• Parallel interface supporting standard SRAM control signals

Applications

• Embedded systems requiring fast local data storage
• Industrial control equipment
• Telecommunications infrastructure hardware

Procurement Notes

Verify the specific suffix BEG confirms the CABGA-48 package and commercial temperature grade. Confirm RoHS compliance status against current manufacturer declarations. Check for obsolescence notices or product change notifications prior to finalizing procurement plans.

Selection Notes

Select this component when a 256K x 16 organization is required with 10 ns speed performance. Ensure the design accommodates the 48-pin CABGA footprint. Verify that the system voltage aligns with the 3.0V to 3.6V operational range and that the commercial temperature range meets environmental requirements.

Part Context

This part belongs to the IDT/Renesas 71V416 series of 4-Mbit CMOS static random-access memories. The series offers various speed grades and package options, including TSOP and BGA configurations, catering to diverse embedded memory needs across industrial and commercial sectors.

Replacement Considerations

Publicly confirmed substitutes include the 71V416L10PHGI, which shares similar electrical characteristics but utilizes a different package type.