71V416S10PHG

71V416S10PHG

$7.30
  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:b8c02155ae1a Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

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71V416S10PHG

Overview

The Renesas Electronics Corporation 71V416S10PHG is a 3.3V CMOS static random-access memory (SRAM) organized as 256K x 16, providing a total storage capacity of 4Mb. It utilizes fully static asynchronous circuitry that requires no clocks or refresh cycles for operation. The device features LVTTL-compatible bidirectional inputs and outputs and operates from a single 3.3V supply within a voltage range of 3V to 3.6V. It is housed in a 44-pin TSOP II package with a center power and ground pinout configuration.

Feature Summary

  • Fully static asynchronous architecture eliminating the need for clock signals or periodic refresh operations
  • LVTTL-compatible bidirectional I/Os ensuring interface compatibility with standard logic families
  • Single 3.3V power supply operation supporting low-voltage system designs
  • Center power and ground pinout design optimizing thermal performance and signal integrity

Applications

  • General-purpose data buffering in embedded systems
  • Cache memory implementation for microcontrollers and processors
  • Storage for lookup tables and configuration data in industrial control applications

Procurement Notes

Verify the specific suffix 'PHG' against official Renesas documentation to confirm the exact package variant and temperature rating. Ensure the ordering code matches the required moisture sensitivity level and lead-free status. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components and confirm current production status.

Selection Notes

Select this component when a non-volatile-like speed without refresh overhead is required in a 3.3V environment. The 256K x 16 organization suits applications needing moderate word width. Verify that the 44-TSOP II footprint fits the PCB layout constraints. Confirm that the LVTTL input levels align with the driving logic family voltage specifications.

Part Context

This part belongs to the 71V416 series of high-speed SRAMs from Renesas Electronics. The series offers various access times and package options to suit different performance and form-factor requirements. The 71V416S10PHG specifically denotes the 10ns access time variant in the TSOP II package, designed for general commercial and industrial use cases requiring reliable parallel memory storage.

Replacement Considerations

Check for direct replacements such as the 71V416L10PHG if an extended temperature range is acceptable. Verify pin-to-pin compatibility and electrical characteristics before substituting. Consult the official datasheet for any functional differences between series variants.

71V416S10PHG71V416S10PHG
$7.30
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