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71V416S10PHG8
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 44TSOP II
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：10ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：10 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics Corporation 71V416S10PHG8 is a static random-access memory (SRAM) device organized as 256K x 16, providing a total storage capacity of 4 Mbit. It operates with a single 3.3V power supply, supporting a voltage range from 3.0V to 3.6V. The component features a parallel interface with a maximum access time of 10 ns and a maximum power supply current of 200 mA. Designed for surface-mount applications, it is housed in a 44-pin TSOP package and functions within an operating temperature range of 0°C to +70°C.
Feature Summary
- Fully static asynchronous circuitry that requires no clock signals or periodic refresh cycles for operation.
- Bidirectional inputs and outputs are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration designed to minimize noise and improve signal integrity.
Applications
- Data buffering in high-speed digital systems
- Cache memory implementation in embedded processors
- Storage for lookup tables in signal processing applications
Procurement Notes
Verify the specific suffix PHG8 against official Renesas documentation to confirm the exact package type and lead-free status. Ensure the required operating temperature range aligns with the commercial grade specifications. Confirm moisture sensitivity level requirements for your assembly process before procurement.
Selection Notes
Select this component when a 4 Mbit asynchronous SRAM with 10 ns speed is required in a 44-lead TSOP form factor. It is suitable for designs needing LVTTL compatibility and center power/ground pins. Consider alternative packages if higher temperature ratings or different pin counts are necessary.
Part Context
This part belongs to the 71V416 series of 3.3V CMOS SRAMs manufactured by Renesas Electronics. The series offers various access speeds and packaging options to support diverse memory requirements in consumer and industrial electronics.
Replacement Considerations
Check for equivalent parts such as the IDT71V416S10PHG8, which shares identical electrical characteristics and pinout configurations within the same product family.
