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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416S10PHGI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3 V power supply with a voltage range of 3.0 V to 3.6 V. The device features a parallel interface and offers a maximum access time of 10 ns. It is housed in a 44-pin Thin Shrink Small Outline Package (TSOP II) designed for surface-mount technology. The component supports an operating temperature range from -40 °C to +85 °C.
Feature Summary
- Fully static asynchronous architecture requiring no clock signals or periodic refresh cycles for data retention.
- LVTTL-compatible bidirectional inputs and outputs ensuring direct interfacing with standard logic families.
- Single 3.3 V CMOS operation providing low power consumption relative to older voltage standards.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded computing systems
- Data storage within industrial control units
Procurement Notes
Verify the specific suffix PHGI8 against official Renesas documentation to confirm package dimensions and lead finish specifications. Confirm current lifecycle status, as availability may be restricted due to end-of-life transitions. Ensure compatibility with existing board layouts regarding the TSOP-44 footprint and pin assignments before procurement.
Selection Notes
Select this component when a 256K x 16 organization is required with 10 ns speed performance. It is suitable for designs needing LVTTL compatibility without external level shifters. Consider alternative speeds if faster access times are necessary, or lower density options if space constraints exist.
Part Context
This part belongs to the 71V416 series of 3.3V CMOS SRAMs. The 'S' designation typically indicates specific speed grades within the family. The device utilizes fully static circuitry, distinguishing it from synchronous DRAM alternatives by eliminating the need for complex timing controllers.
Replacement Considerations
Check for 71V416S12 variants if slower speeds are acceptable. Verify 71V416L10 parts for potential pin-compatible upgrades, though voltage tolerances must be confirmed.
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