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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:44-SOJ
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416S10YG is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) integrated circuit. It operates on a single 3.3 V power supply with a voltage range of 3.0 V to 3.6 V. The device features a parallel interface and offers a maximum access time of 10 ns. It is housed in a 44-lead BSOJ package measuring 0.400 inches wide. The component supports surface-mount installation and functions within an ambient temperature range of 0°C to +70°C.
Feature Summary
- Asynchronous operation requiring no external clock signals or periodic refresh cycles for data retention.
- LVTTL-compatible bidirectional inputs and outputs ensuring direct interfacing with standard logic families.
- Single 3.3 V CMOS technology providing low power consumption relative to older SRAM generations.
Applications
- High-speed data buffering in telecommunications equipment.
- Cache memory implementation in industrial control systems.
- Data storage in embedded computing architectures.
Procurement Notes
Verify the specific suffix 'YG' against current manufacturer documentation, as this part number is listed as obsolete in multiple distributor records. Confirm RoHS compliance status, as legacy versions may differ from updated manufacturing runs. Check for moisture sensitivity level requirements during handling and storage to prevent package damage before reflow soldering.
Selection Notes
Select this component when a 256K x 16 organization is required with a 10 ns speed grade. Ensure the design accommodates the 44-BSOJ footprint and 3.3 V logic levels. Consider alternative packages like TSOP if lead-free surface mount options are preferred over the SOJ form factor.
Part Context
This device belongs to the 71V416 family of high-performance CMOS SRAMs produced by Renesas Electronics. The family shares common architectural features including center power and ground pinouts for improved signal integrity. Variants within the series differ primarily in access speeds and packaging configurations.
Replacement Considerations
71V416L10PHGI
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