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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:44-SOJ
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics 71V416S10YG8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3V CMOS supply with a voltage range of 3.0V to 3.6V. The device features a parallel interface and offers a maximum access time of 10 ns. It is housed in a 44-pin Small Outline J-Lead (SOJ) package designed for surface mount technology. The component supports an industrial operating temperature range from 0°C to +70°C.
Feature Summary
- Fully static asynchronous operation requiring no clock signals or periodic refresh cycles
- LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing
- Single 3.3V power supply operation with standard CMOS technology
Applications
- Data buffering in high-speed digital systems
- Cache memory implementation in embedded controllers
- Industrial control system data storage
Procurement Notes
Verify the specific suffix YG8 against the official datasheet to confirm package dimensions and pinout compatibility. Confirm RoHS compliance status as indicated in current documentation. Check for End-of-Life notices, as this component family has faced discontinuation events. Ensure moisture sensitivity level handling procedures are followed during assembly.
Selection Notes
Select this part when a 10 ns access speed is required for 256K x 16 SRAM applications. The SOJ-44 package is suitable for designs accommodating its specific footprint. Compare against the 71V416S12YG8 if slower speeds allow for cost reduction. Verify that the 3.3V logic levels match the system's I/O requirements.
Part Context
This component belongs to the 71V416S series of 3.3V CMOS SRAMs originally developed by Integrated Device Technology (IDT) and later acquired by Renesas Electronics. The 'S' designation typically indicates the commercial temperature grade variant within the broader 71V416 product line.
Replacement Considerations
The IDT71V416S10YG8 is an alias for this part number. For functional equivalents, consider the 71V416S12YG8 which shares the same organization and package but offers a 12 ns access time.
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