71V416S12BE

Overview

The Renesas Electronics 71V416S12BE is a 4 Mbit (256K x 16) asynchronous static random-access memory. It operates with a supply voltage range of 3 V to 3.6 V and features a maximum access time of 12 ns. The device supports a maximum power supply current of 180 mA. It functions within an operating temperature range of -40°C to +85°C. The component utilizes a parallel interface and is available in surface-mount packages including CABGA-48.

Feature Summary

• High-speed asynchronous operation with equal access and cycle times
• JEDEC center power and ground pinout configuration for reduced noise
• CMOS technology fabrication for high performance

Applications

• High-density volatile memory systems
• Industrial control applications
• Automotive electronics requiring extended temperature ranges

Procurement Notes

Verify the specific suffix against official documentation, as it determines package type and temperature grade. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for obsolescence notices or lifecycle changes from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns speed at 3.3 V. Ensure the design accommodates the specified 180 mA maximum current draw. Verify that the chosen package variant matches the PCB footprint and thermal management strategy.

Part Context

This part belongs to the 71V416 series of advanced high-speed CMOS static RAMs. The series offers various speed grades and package options to suit different system requirements while maintaining compatibility with standard SRAM interfaces.

Replacement Considerations

Equivalent parts include IDT71V416S12 variants. Verify pinout compatibility and electrical specifications before substitution.