71V416S12BE8

Overview

The 71V416S12BE8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It features a parallel interface with a maximum access time of 12 ns and operates within a supply voltage range of 3 V to 3.6 V. The device utilizes CMOS technology and is housed in a 48-CABGA package, suitable for surface-mount applications. Designed for industrial environments, it supports an operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture providing fast data access
• CMOS technology ensuring low power consumption during operation
• Industrial-grade reliability with extended temperature support

Applications

• Industrial control systems requiring non-volatile-like speed
• Embedded storage for microcontroller-based designs
• Data buffering in high-speed processing circuits

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm package integrity and moisture sensitivity handling procedures prior to assembly. Cross-reference datasheet revisions to ensure compatibility with current design specifications and regulatory requirements.

Selection Notes

Select this component for applications demanding rapid random access to 16-bit data words. Ensure the system design accommodates the specified 3 V to 3.6 V supply range and thermal management for the -40°C to +85°C operational envelope. Validate pinout compatibility with existing PCB layouts.

Part Context

This part belongs to the 71V416S series of high-performance asynchronous SRAMs. It shares architectural similarities with other variants in the family, differing primarily in access speed and packaging options. The series is designed for general-purpose memory applications where speed and density are balanced.

Replacement Considerations

Check for direct substitutes such as the IDT71V416S12BE8 or equivalent Renesas variants with matching 12 ns access times and CABGA-48 packages. Verify electrical parameters and pin configurations before substitution.