71V416S12BEG

Overview

The Renesas Electronics 71V416S12BEG is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) device. It operates with a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 12 ns. The component supports parallel interface communication and has a maximum power supply current of 180 mA. It is designed for surface-mount installation in SOJ-44 packages, functioning within an operating temperature range of -40°C to +85°C.

Feature Summary

• Asynchronous operation with equal access and cycle times for consistent performance
• JEDEC center power and ground pinout configuration to reduce electrical noise
• CMOS technology optimized for high-speed data storage applications

Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in industrial controllers
• Data storage in telecommunications equipment

Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm package type and environmental compliance. Confirm availability status as distribution channels may list obsolete or end-of-life variants. Ensure the ordering part number matches the required lead time and moisture sensitivity level for your assembly process.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns speed grade. Compare against other suffixes in the 71V416 series for different package options like TSOP or CABGA if pin compatibility differs. Verify that the 3.3 V logic levels match the system voltage requirements.

Part Context

This device belongs to the Renesas 71V416 family of advanced high-speed CMOS SRAMs. The family provides non-volatile-like reliability with volatile speed, utilizing standard CMOS processes for low power consumption while maintaining high-density storage capabilities for complex digital designs.

Replacement Considerations

Check for direct pin-compatible alternatives within the same Renesas series, such as the 71V416L12BEG, which shares similar electrical characteristics but may differ in package or temperature rating. Cross-reference with other manufacturers offering 256Kx16 12ns SRAMs only if functional equivalence is verified.