— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 48CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-TFBGA
- Supplier Device Package:48-CABGA (9x9)
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416S12BEI is an asynchronous Static Random Access Memory (SRAM) integrated circuit. It provides a total storage capacity of 4 Mbit, organized as 256K words by 16 bits. The device operates with a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 12 ns. It utilizes a parallel interface and supports surface-mount installation in a 48-CABGA package measuring 9x9 mm. The component is rated for an operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous operation with equal access and cycle times for consistent performance
- JEDEC center power and ground pinout configuration designed to reduce electrical noise
- Advanced high-speed CMOS technology for efficient static random access memory functionality
Applications
- High-density volatile memory buffering in electronic systems
- Cache memory implementation in embedded processing architectures
- Data storage in industrial control applications requiring wide temperature tolerance
Procurement Notes
Verify the specific suffix designation against official Renesas documentation to confirm package type and environmental compliance status. Ensure that the selected variant matches the required lead-free or RoHS specifications for your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current production status and availability constraints before finalizing procurement plans.
Selection Notes
Select this component when a 256K x 16 organization is required with a 12 ns access speed. It is suitable for designs needing a 3.3 V nominal supply and surface-mount CABGA packaging. Consider the -40°C to +85°C temperature range for industrial environments. Verify compatibility with existing PCB footprints and signal integrity requirements for parallel SRAM interfaces.
Part Context
This part belongs to the 71V416 series of advanced high-speed CMOS static RAMs from Renesas Electronics. The series typically includes variants with different access speeds and package options, such as TSOP and BGA configurations. These components are generally used in applications requiring fast, non-volatile data retention during power loss, serving as temporary storage buffers in complex digital systems.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific component were not identified in the provided source material.
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