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71V416S12BEI8
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 48CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：12ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-TFBGA
- Supplier Device Package：48-CABGA (9x9)
- Access Time：12 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics Corporation 71V416S12BEI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) integrated circuit. It operates on a single 3.0 V to 3.6 V power supply and features a 12 ns access time. The device utilizes CMOS technology with LVTTL-compatible bidirectional I/Os and employs a center power and ground pinout architecture. It is housed in a 48-CABGA (9x9 mm) surface-mount package, designed for industrial temperature ranges from -40°C to +85°C.
Feature Summary
- Fully static asynchronous operation requiring no clock signals or periodic refresh cycles.
- LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing.
- Center power and ground pinout configuration to optimize signal integrity.
Applications
- High-speed data buffering in embedded systems
- Cache memory implementation in microprocessor architectures
- Industrial control system data storage
Procurement Notes
Verify the specific suffix BEI8 against official datasheets to confirm the CABGA-48 package and industrial temperature range (-40°C to +85°C). Confirm RoHS compliance status as documentation may vary by production batch. Ensure compatibility with existing PCB footprints for 48-CABGA components during procurement planning.
Selection Notes
Select this component when a 256K x 16 organization is required with a 12 ns speed grade. The 48-CABGA package is suitable for high-density surface mount applications. Verify that the operating voltage range of 3.0 V to 3.6 V aligns with the system's power supply rails before integration.
Part Context
This part belongs to the 71V416 series of 4 Mbit SRAMs from Renesas Electronics. The series offers various speed grades and packaging options, including TSOP and SOJ variants. The 71V416S12BEI8 specifically denotes the 12 ns speed class within the S-series, packaged in a compact ball grid array format for modern electronic designs.
Replacement Considerations
Cross-reference with IDT71V416S12BEI8 for potential functional equivalence. Verify pinout compatibility and electrical specifications against alternative 4 Mbit SRAMs from other manufacturers if sourcing constraints exist.
