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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics 71V416S12PHGI is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V. The device features a parallel interface and offers a maximum access time of 12 ns. It is housed in a 44-pin Thin Shrink Small Outline Package (TSOP II). The component supports surface-mount installation and functions within an operating temperature range of -40°C to +85°C.
Feature Summary
- Asynchronous operation requiring no external clock signals or periodic refresh cycles for data retention.
- LVTTL-compatible bidirectional inputs and outputs ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration to optimize signal integrity and reduce noise.
Applications
- Data buffering in high-speed digital systems
- Cache memory implementation in embedded processors
- Industrial control system data storage
Procurement Notes
Verify the specific package variant, as the 71V416 series includes TSOP, SOJ, and BGA options. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications. Ensure the selected part number matches the required access speed and voltage parameters for the target application design.
Selection Notes
Select this component when a 256K x 16 organization is required with 12 ns access speed. It is suitable for designs needing LVTTL compatibility and center-ground pinouts. Consider alternative speeds like 10 ns or 15 ns if performance or cost constraints differ from this specific model's capabilities.
Part Context
This SRAM belongs to the Renesas 71V416 family of 3.3V CMOS static random-access memories. The family provides various access times and packaging options to support diverse embedded memory needs. These devices are designed for applications requiring fast, non-volatile-like data retention without the complexity of synchronous interfaces.
Replacement Considerations
IDT71V416S12PHGI
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