71V416S12YG

71V416S12YG

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:3c64f8980455 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

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71V416S12YG

Overview

The Renesas Electronics 71V416S12YG is a 3.3V CMOS static random-access memory organized as 256K x 16 bits, providing a total storage capacity of 4 Mbit. It features a parallel interface with an access time of 12 ns and operates within a supply voltage range of 3 V to 3.6 V. The component utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles. It supports bidirectional LVTTL-compatible inputs and outputs and is housed in a 44-SOJ surface-mount package.

Feature Summary

  • Fully static asynchronous operation requiring no clock signals or periodic refresh cycles
  • LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing
  • Center power and ground pinout configuration for improved signal integrity
  • Single 3.3V supply operation with low standby current characteristics

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in industrial control systems
  • Data storage in embedded network appliances
  • Temporary storage in automotive electronic control units

Procurement Notes

Verify RoHS compliance status and moisture sensitivity level (MSL 3) before handling. Confirm lead-free designation and check for end-of-life notices or production change notifications. Ensure proper ESD protection during storage and assembly. Validate package dimensions against design specifications.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns access speed. Suitable for designs needing LVTTL compatibility and single 3.3V operation. Consider the 44-SOJ package constraints for PCB layout. Evaluate thermal performance within the specified operating temperature range.

Part Context

Part of the 71V416 series of high-speed SRAMs from Renesas Electronics. This series offers various access times and organizational options. The 71V416S12 variant specifically targets applications requiring moderate speed with wide data bus width. It complements other memory solutions in Renesas' portfolio for system integration.

Replacement Considerations

Check for equivalent parts with identical pinouts and electrical characteristics. Verify compatibility with existing board layouts and software drivers. Consider alternative packages if space constraints differ.

71V416S12YG71V416S12YG

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