71V416S12YG8

71V416S12YG8

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:1ed14aee9b73 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

Download product information

71V416S12YG8

Overview

The 71V416S12YG8 is a 4 Mbit (256K x 16) asynchronous static random-access memory manufactured by Renesas Electronics. It operates on a single 3.3 V CMOS supply with a voltage range of 3.0 V to 3.6 V. The device features a parallel interface with a maximum access time of 12 ns and a maximum power supply current of 180 mA. It is housed in a 44-pin SOJ package designed for surface mount technology. The component supports an operating temperature range from -40 °C to +85 °C and is classified as SDR storage type.

Feature Summary

  • Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation.
  • Bidirectional inputs and outputs are LVTTL-compatible for direct interfacing.
  • Single 3.3 V power supply operation simplifies system design.

Applications

  • High-speed data buffering in embedded systems
  • Cache memory applications in microprocessor-based designs
  • Industrial control systems requiring wide temperature stability

Procurement Notes

Verify the specific suffix YGI8 against official Renesas documentation to confirm pinout and packaging details, as variations exist within the 71V416 family. Confirm end-of-life status and availability through authorized distributors, as this component may be discontinued. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent damage.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns access speed. It is suitable for designs needing LVTTL compatibility and 3.3 V operation. Consider the SOJ-44 package constraints for PCB layout. Compare against other speeds in the 71V416 series if timing requirements differ.

Part Context

This part belongs to the 71V416S12 series of asynchronous SRAMs originally developed by IDT and acquired by Renesas. The series offers various access times and package options. The 71V416S12 variant specifically targets applications needing moderate speed with high density in a compact form factor.

Replacement Considerations

IDT71V416S12YGI8 is a confirmed substitute part number representing the same component under the previous manufacturer branding.

71V416S12YG871V416S12YG8

Click on the inquiry