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71V416S15BEG
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 48CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：15ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-TFBGA
- Supplier Device Package：48-CABGA (9x9)
- Access Time：15 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics Corporation 71V416S15BEG is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) integrated circuit. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 15 ns. The device utilizes a parallel interface and is housed in a 48-CABGA package with dimensions of 9x9 mm. It supports surface-mount installation and functions across an industrial temperature range of -40°C to +85°C.
Feature Summary
- Asynchronous SRAM architecture providing fast data access via parallel interface
- Industrial-grade operational capability spanning extended temperature ranges
- CMOS technology ensuring low power consumption during operation
Applications
- High-speed data buffering in embedded systems
- Cache memory implementation for microprocessors
- Data storage in industrial control equipment
Procurement Notes
Verify the specific suffix against official Renesas documentation to confirm package type, temperature grade, and compliance status. Confirm current production status as older variants may be end-of-life. Ensure compatibility with existing board layouts regarding pinout and thermal requirements before procurement.
Selection Notes
Select this component when a 256K by 16-bit organization is required with 15 ns speed performance. Consider the 48-CABGA package for space-constrained designs requiring robust surface-mount reliability. Verify that the 3.3 V nominal supply aligns with the system's power distribution network.
Part Context
This part belongs to the Renesas 71V416 series of high-performance asynchronous SRAMs. These devices are designed for applications demanding rapid read and write cycles without complex synchronization protocols. The series offers various packaging options to suit different density and form factor requirements.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical specifications carefully. Generic SRAM replacements may not match the exact timing or voltage characteristics.
