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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 48CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-TFBGA
- Supplier Device Package:48-CABGA (9x9)
- Access Time:15 ns
- Grade:-
- Qualification:-
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Overview
The 71V416S15BEI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates on a single 3.3 V power supply with a voltage range of 3.0 V to 3.6 V. The device features a 15 ns access time and supports parallel interface communication. It is housed in a 48-CABGA package suitable for surface-mount technology. The component is rated for an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Fully static asynchronous operation requiring no clock signals or periodic refresh cycles
- LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing
- Center power and ground pinout configuration to minimize noise and improve signal integrity
Applications
- High-speed data buffering in embedded systems
- Cache memory implementation in microcontroller-based designs
- Data storage in industrial control equipment
Procurement Notes
Verify the specific suffix BEI8 against official datasheets to confirm the CABGA-48 package and industrial temperature grade. Confirm RoHS compliance status as documentation indicates potential variations. Check current lifecycle status, as this part may be subject to end-of-life notices or obsolescence. Ensure moisture sensitivity level requirements are met during handling and assembly processes.
Selection Notes
Select this component when a 256K x 16 organization is required with 15 ns speed performance. It is suitable for designs needing center power/ground pinouts for reduced electromagnetic interference. Compare against other 71V416 variants if different packages like TSOP or SOJ are preferred, or if commercial temperature ranges suffice instead of the industrial grade specified here.
Part Context
This SRAM belongs to the Renesas 71V416 series, which provides high-density static memory solutions. The series is characterized by CMOS technology and low power consumption relative to older bipolar alternatives. The 71V416S15BEI8 specifically denotes the 15 ns speed bin, S-series variant, and BEI8 packaging code within this family.
Replacement Considerations
IDT71V416S15BEI8 is listed as an alias for this component.
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