71V416S15YG

Overview

The IDT71V416S15YG is a 4-megabit (4Mb) high-speed asynchronous static random-access memory (SRAM) organized as 256K words by 16 bits. Fabricated using advanced CMOS technology, it operates from a single 3.3V power supply with access times of 15 nanoseconds. The device features TTL-compatible bidirectional data inputs and outputs, along with upper and lower byte enable pins for flexible data masking. It utilizes a standard JEDEC pinout to minimize noise and includes chip select and output enable controls. The component is housed in a 44-pin, 400-mil plastic small outline J-leaded (SOJ) package designed for surface-mount applications.

Feature Summary

• High-speed asynchronous operation with 15ns access time
• Single 3.3V power supply with low-power consumption via chip deselect
• TTL-compatible bidirectional I/O with independent byte enables
• JEDEC center power/ground pinout for reduced signal noise

Applications

• High-performance computing systems requiring fast data retrieval
• Telecommunications equipment buffer memory
• Industrial control systems with strict timing requirements
• Network infrastructure routers and switches

Procurement Notes

Verify component authenticity through authorized Renesas or IDT distributors due to end-of-life status. Confirm RoHS compliance and moisture sensitivity level (MSL 3) handling procedures during storage and assembly. Check for specific manufacturing date codes and lot traceability required by your quality management system. Ensure the 44-SOJ package dimensions match your PCB footprint exactly before finalizing procurement orders.

Selection Notes

Select this part when a 256K x 16 organization is required with 15ns speed grade. Compare against the 71V416S12 variant if faster 12ns access is needed, or the 71V416S20 if cost reduction allows slower speeds. Consider the 71V416L series if TSOP II packaging is preferred over SOJ for board space constraints. Verify voltage compatibility with existing 3.3V logic levels in the target design.

Part Context

This component belongs to the IDT 71V416S family of 3.3V CMOS SRAMs. It shares architectural similarities with other members like the 71V416S12 and 71V416S20, differing primarily in access speed specifications. The family is characterized by its use of high-reliability CMOS processes and standardized interfaces suitable for parallel data bus architectures in embedded and communication systems.

Replacement Considerations

The 71V416S15PHGI is listed as a manufacturer-recommended alternative. Verify pinout compatibility and electrical parameters before substitution. Other potential replacements include variants from Alliance Memory, but functional equivalence must be confirmed against the original datasheet specifications.