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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 48CABGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-TFBGA
- Supplier Device Package:48-CABGA (9x9)
- Access Time:15 ns
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Overview
The IDT 71V416VL15BEG is a 4-Mbit asynchronous static random-access memory (SRAM) IC manufactured by Integrated Device Technology. It features a parallel interface and operates at a supply voltage of 3.6V. The device offers an access time of 15 ns and a write cycle time of 15 ns. It is housed in a 48-pin CABGA package with dimensions of 9x9 mm, designed for surface mount technology. The component supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing high-speed data access
- Compact 48-pin CABGA surface-mount packaging for space-constrained designs
- Industrial-grade operational temperature range ensuring reliability in varied environments
Applications
- High-performance computing systems requiring fast cache memory
- Telecommunications infrastructure equipment
- Network routing and switching devices
Procurement Notes
Verify the specific suffix 'BEG' against official Renesas or IDT documentation to confirm pinout and electrical specifications. Confirm current availability status as legacy components may have limited stock. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement orders.
Selection Notes
Select this component when a 4-Mbit capacity with 15 ns access speed is required in a compact 48-pin package. Consider the 3.6V operating voltage and industrial temperature range for suitability in harsh environments. Evaluate system power constraints and interface compatibility with the parallel bus architecture.
Part Context
Integrated Device Technology was acquired by Renesas Electronics Corporation in March 2019. The product line continues under the Renesas portfolio, maintaining the established IDT naming conventions for standard memory products. This part belongs to the broader family of high-density SRAM solutions designed for embedded applications.
Replacement Considerations
Consult official Renesas discontinuance notices for confirmed substitute part numbers. Verify functional equivalence regarding pinout, timing parameters, and voltage levels before replacing.
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