71V416YS15PHG

Overview

The IDT 71V416YS15PHG is a high-speed Static RAM organized as 256K x 16, providing a total memory density of 4 Mbit. Fabricated using CMOS technology, this asynchronous SRAM features a maximum access time of 15 ns. It operates within a voltage range of 3.0 V to 3.6 V and utilizes a parallel interface. The component is housed in a 44-pin TSOP II package with a width of 10.16 mm.

Feature Summary

• High-speed asynchronous operation for rapid data access
• CMOS fabrication ensures high reliability and performance
• Parallel interface supports standard memory bus connections

Applications

• Fast read/write operations in embedded systems
• Cache memory applications requiring low latency
• Data buffering in high-performance computing environments

Procurement Notes

Verify the specific suffix 'Y' against official documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status and lead-free certification requirements with the manufacturer or authorized distributor before finalizing procurement specifications.

Selection Notes

Select this component when a 256K x 16 organization is required with a 15 ns access speed. Ensure the design accommodates the 3.0 V to 3.6 V supply voltage range. Verify that the 44-pin TSOP II footprint matches the PCB layout constraints and thermal management requirements.

Part Context

This part belongs to the IDT 71V416S series of high-speed SRAMs. The series is designed for applications demanding fast random access and low power consumption. The device integrates standard control signals for easy interfacing with microprocessors and digital signal processors.

Replacement Considerations

Cross-reference with IDT71V416VS15PHG for potential pin-compatible alternatives. Verify electrical characteristics and package dimensions match before substitution.