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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The 71V424L10PHGI is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates within a supply voltage range of 3 V to 3.6 V and features a maximum access time of 10 ns. The device utilizes a parallel interface and is housed in a 44-TSOP II package with a width of 10.16 mm. It supports an industrial operating temperature range from -40°C to +85°C and complies with RoHS3 standards.
Feature Summary
- Asynchronous SRAM architecture providing fast data access for embedded systems
- Wide industrial temperature rating suitable for demanding environments
- CMOS technology ensuring low power consumption during operation
Applications
- Industrial control systems requiring reliable volatile memory
- Embedded applications needing high-speed data buffering
- Automotive electronics operating under strict thermal conditions
Procurement Notes
Verify the specific suffix PHGI against official datasheets to confirm the 44-TSOP II package and industrial temperature grade. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors, as regulatory statuses can change. Ensure compatibility with existing PCB footprints for the TSOP II form factor before procurement.
Selection Notes
Select this component when a 512K x 8 organization is required with 10 ns speed performance. Compare against other variants in the 71V424 series based on package type and temperature range. Ensure the system design accommodates the 3 V to 3.6 V supply voltage requirements and parallel interface constraints.
Part Context
This part belongs to the Renesas 71V424L series of asynchronous SRAMs. It shares architectural similarities with other members like the 71V424L15PHG but offers faster access times. The series is designed for applications requiring non-volatile-like reliability without the complexity of flash memory programming cycles.
Replacement Considerations
The IDT71V424L10PHGI is listed as an alias for this component. Verify pinout and electrical specifications match exactly before substitution. Other speeds in the same package may require timing adjustments.
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