71V424L10YG

Overview

The IDT71V424L10YG is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 10 ns and operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a 36-SOJ surface-mount package and supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture for high-speed data storage
• Industrial-grade wide temperature operational capability
• CMOS technology ensuring low power consumption

Applications

• Industrial control systems requiring reliable volatile memory
• Embedded applications with strict thermal constraints
• High-performance computing modules utilizing parallel interfaces

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance specifications, as legacy variants may differ. Validate package integrity and moisture sensitivity level handling procedures prior to assembly to ensure reliability in final deployment.

Selection Notes

Select this component for designs requiring 10 ns access speeds and 36-pin SOJ packaging. Ensure the system voltage aligns with the 3 V to 3.6 V range. Consider alternative packages like TSOP if pin compatibility differs, though electrical characteristics remain consistent across the series.

Part Context

This part belongs to the IDT71V424 family of asynchronous SRAMs. It shares core architectural similarities with other suffixes such as L15 or S10, differing primarily in speed grade and physical package configuration. The 'Y' suffix typically denotes specific environmental or lead-free processing standards defined by the manufacturer.

Replacement Considerations

Public confirmed substitute part numbers include IDT71V424L10YGI and IDT71V424S10YGI. Verify pinout compatibility and thermal ratings before substitution.