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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 36SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:36-SOJ
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The 71V424L10YGI is a 4 Mbit (512K x 8) asynchronous static random-access memory manufactured by Renesas Electronics. It operates on a single 3.3 V CMOS supply with a voltage range of 3.0 V to 3.6 V. The device features a parallel interface and offers a maximum access time of 10 ns. It is housed in a 36-lead SOJ surface-mount package and supports an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous SRAM architecture requiring no clock or refresh cycles
- CMOS technology compatible with LVTTL logic levels
- Single 3.3 V power supply operation
Applications
- Industrial equipment control systems
- Embedded data storage applications
- Consumer electronics memory buffers
Procurement Notes
This component has reached end-of-life status and is no longer manufactured. Verification of availability should focus on surplus stock from authorized distributors or alternative suppliers. Buyers must confirm the authenticity of existing inventory and ensure compliance with RoHS3 specifications before procurement.
Selection Notes
Engineers selecting this part should consider its specific 36-SOJ package dimensions and 10 ns speed grade. Due to the discontinuation, design-in alternatives with identical pinouts and electrical characteristics are recommended for new projects. Verify that the selected replacement maintains compatibility with the 3.3 V logic environment.
Part Context
The 71V424L10YGI belongs to the 71V424 series of high-speed asynchronous SRAMs. This family provides non-volatile-like performance with volatile memory density, designed for applications requiring fast random access. The 'L' suffix typically denotes the specific speed bin within the product line.
Replacement Considerations
Officially confirmed substitute part numbers include IDT71V424S10YGI and 71V424S10YG.
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