71V424L12YG8

Overview

The 71V424L12YG8 is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 3 V to 3.6 V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 44-lead Thin Small Outline Package II (TSOP II). It supports surface-mount installation and functions across an industrial temperature range of 0°C to 70°C.

Feature Summary

• Asynchronous parallel SRAM architecture with 4 Mbit capacity organized as 512K words by 8 bits.
• Fast 12 ns access time for efficient data retrieval in high-speed digital systems.
• Operates on a single 3.3 V power supply, compatible with standard CMOS logic levels.

Applications

• Cache memory buffers in embedded computing systems
• Data storage in telecommunications equipment
• Temporary memory holding in industrial control units

Procurement Notes

Verify the exact suffix configuration against official Renesas documentation, as package variations exist within the 71V424 series. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration. Check for end-of-life notifications or product discontinuance notices from the manufacturer to ensure long-term availability for production cycles.

Selection Notes

Select this component when a 4 Mbit asynchronous SRAM with a 12 ns speed grade is required in a 44-pin TSOP II package. Ensure the design environment supports the specified 3 V to 3.6 V operating voltage and the 0°C to 70°C commercial temperature range. Compare pin compatibility with existing designs if substituting from other 71V424 variants.

Part Context

This part belongs to the Renesas 71V424 family of asynchronous SRAMs, which provides non-volatile data retention during power loss but requires continuous power for operation. The series includes various speed grades and package options, such as SOJ and TSOP, catering to different board space and performance constraints in consumer and industrial electronics.

Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Potential alternatives may include other 4 Mbit asynchronous SRAMs with identical pinouts and electrical characteristics, provided they meet the specific package and temperature requirements.