71V424L12YGI8

71V424L12YGI8

  • Description:IC SRAM 4MBIT PARALLEL 36SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:ef6afa6500c7 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 36SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:512K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:36-SOJ
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

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71V424L12YGI8

Overview

The 71V424L12YGI8 is a 4 Mbit (512K x 8) asynchronous static random-access memory manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 3 V to 3.6 V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 36-SOJ surface-mount package. It supports an industrial operating temperature range from -40°C to +85°C and complies with RoHS3 standards.

Feature Summary

  • Asynchronous SRAM architecture providing high-speed data access
  • JEDEC center power and ground pinout configuration for reduced noise
  • Equal access and cycle times for consistent performance
  • Industrial temperature rating suitable for demanding environments

Applications

  • High-speed data buffering in embedded systems
  • Cache memory implementation in microcontroller applications
  • Data storage in industrial control equipment
  • Temporary storage in telecommunications infrastructure

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and moisture sensitivity level handling procedures during assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Validate supplier documentation against official Renesas records before integration.

Selection Notes

Select this component when a 512K x 8 organization with 12 ns speed is required in a 36-SOJ form factor. Ensure system voltage aligns with the 3 V to 3.6 V operational range. Consider thermal management for the specified industrial temperature range. Evaluate alternative packages if footprint constraints differ from standard SOJ dimensions.

Part Context

This part belongs to the 71V424 series of advanced high-speed CMOS static RAMs. It represents a legacy product line from Renesas, formerly IDT, designed for parallel interface applications. The suffix YGI indicates specific packaging and environmental compliance attributes within the broader family of 4 Mbit SRAM devices.

Replacement Considerations

The 71V424S12PHGI is listed as a manufacturer-recommended substitute. Verify electrical parameter equivalence and pin compatibility before substitution. Review updated datasheets for any functional differences between the L and S series variants.

71V424L12YGI871V424L12YGI8

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