71V424L15YG

Overview

The IDT71V424L15YG is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 15 ns and operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a 36-lead BSOJ package, measuring 0.400 inches (10.16 mm) in width. It supports surface-mount installation and is rated for an industrial operating temperature range of -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture providing 4 Mbit storage capacity organized as 512K words by 8 bits.
• High-speed data access capability with a specified 15 ns access time for efficient system integration.
• Industrial-grade thermal stability ensuring reliable operation across extended temperature ranges from -40°C to +85°C.
• CMOS technology implementation supporting standard 3.3 V logic levels for broad compatibility.

Applications

• Data buffering in high-performance computing systems
• Cache memory implementation in embedded controllers
• Storage applications in telecommunications infrastructure equipment

Procurement Notes

Verify component authenticity through authorized distributors due to potential availability of obsolete or refurbished units. Confirm RoHS compliance status, as specific suffixes may indicate non-compliant variants. Validate package dimensions against the 36-BSOJ specification to ensure mechanical fit. Check for recent Product Change Notices regarding manufacturing site transfers or material updates that may affect long-term sourcing strategies.

Selection Notes

Select this component when a 4 Mbit asynchronous SRAM with 15 ns speed is required in a 36-lead SOJ form factor. Ensure the design accommodates the 3 V to 3.6 V supply voltage range and industrial temperature requirements. Consider pinout compatibility if replacing legacy IDT devices. Verify that the parallel interface signals align with the target microcontroller or FPGA capabilities without requiring level shifting beyond the specified voltage limits.

Part Context

This part belongs to the IDT 71V424 family of asynchronous SRAMs, designed for general-purpose memory applications. The 'L' suffix typically denotes lower power consumption characteristics compared to standard variants, while 'YI' indicates the specific lead-free and industrial temperature grade packaging. The series offers a balance of density and speed suitable for mid-range processing tasks.

Replacement Considerations

Direct replacements include IDT71V424L10YGI for faster 10 ns access times in the same package. For broader compatibility, verify pin-to-pin equivalents from other manufacturers offering 4 Mbit parallel SRAMs in 36-SOJ packages, ensuring electrical parameters match the original specifications.