71V424L15YG8

71V424L15YG8

  • Description:IC SRAM 4MBIT PARALLEL 36SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:d0b3bfdb1dc7 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 36SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:512K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:36-SOJ
  • Access Time:15 ns
  • Grade:-
  • Qualification:-

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71V424L15YG8

Overview

The IDT71V424L15YG8 is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 15 ns and operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a 36-lead BSOJ package, measuring 0.400 inches (10.16 mm) in width. It supports surface-mount installation and is designed for industrial temperature ranges from -40°C to +85°C.

Feature Summary

  • Asynchronous parallel SRAM architecture providing fast data access without external clock synchronization
  • Wide operating voltage range supporting standard 3.3 V logic systems
  • Industrial-grade thermal stability ensuring reliable performance across extended temperature extremes

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data storage in industrial control and automation hardware

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as original variants may not meet current environmental standards. Validate package integrity and pin alignment against the 36-SOJ specification before integration into final assemblies.

Selection Notes

Select this component when a 512K x 8 organization is required with 15 ns speed grade. Ensure design compatibility with the 36-BSOJ footprint and 3.3 V power domain. Consider alternative packages like TSOP if board space constraints differ from the SOJ form factor.

Part Context

This part belongs to the IDT 71V424 family of high-performance asynchronous SRAMs. It shares core electrical characteristics with other suffixes but differs in packaging and temperature rating. The 'Y' suffix typically denotes industrial temperature range and specific package type within the Renesas portfolio.

Replacement Considerations

Direct substitutes include IDT71V424L15PHG (TSOP package) or IDT71V424S15YG8 (commercial temp). Verify pinout compatibility and thermal specifications before substitution.

71V424L15YG871V424L15YG8

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