71V424S12PHG

Overview

The 71V424S12PHG is a 4-Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 44-lead Thin Small Outline Package (TSOP II). Designed for surface-mount installation, it supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture with 4-Mbit storage capacity
• High-speed data access with 12 ns maximum access time
• Industrial-grade operational reliability across extended temperature ranges

Applications

• Embedded systems requiring fast local data buffering
• Industrial control units needing reliable volatile memory
• Telecommunications equipment utilizing high-speed data processing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific package markings against official datasheets. Ensure the supplier provides valid traceability documentation for quality assurance purposes prior to acquisition.

Selection Notes

Select this component when a 4-Mbit asynchronous SRAM with 12 ns speed is required in a 44-pin TSOP II package. Ensure the design accommodates the 3.0 V to 3.6 V supply voltage range and industrial temperature specifications. Verify pin compatibility if replacing legacy IDT variants.

Part Context

This part belongs to the 71V424 series of asynchronous SRAMs. It serves as a successor to earlier IDT-branded versions following the Renesas acquisition. The device maintains functional compatibility with previous generations while offering updated manufacturing standards and packaging options for modern electronic designs.

Replacement Considerations

The 71V424S12YGI is a documented substitute for this component. Verify pinout and electrical specifications match before implementation.