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71V424S12PHGI8
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 44TSOP II
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：512K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：12ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：12 ns
- Grade：-
- Qualification：-
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Overview
The 71V424S12PHGI8 is a high-speed asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 4 Mbit, organized as 512K words by 8 bits. The device operates with a maximum access time of 12 ns and supports a supply voltage range of 3.0 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin Thin Small Outline Package (TSOP II). The component is designed for surface-mount installation and functions within an industrial temperature range of -40°C to +85°C.
Feature Summary
- High-speed asynchronous operation with 12 ns access time
- Low-voltage CMOS technology compatible with 3.3 V systems
- JEDEC center power and ground pinout configuration
- LVTTL-compatible bidirectional I/O lines
Applications
- Data buffering in telecommunications equipment
- Cache memory in embedded control systems
- Industrial automation controller storage
- Network infrastructure hardware
Procurement Notes
Verify the specific suffix '8' against official Renesas documentation to confirm reel packaging requirements, as standard datasheets may list tube packaging. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure the source is an authorized distributor due to the component's discontinued status.
Selection Notes
Select this part when a 4 Mbit parallel SRAM with 12 ns speed is required in a 44-pin TSOP II package. It serves as a direct replacement for older IDT variants within the same family. Consider thermal management and voltage stability for 3.3 V applications in harsh environments.
Part Context
This component belongs to the 71V424 series of high-speed CMOS static RAMs. It is part of Renesas' legacy portfolio, originally developed under IDT branding before acquisition. The series is characterized by low power consumption and fast cycle times suitable for demanding digital logic applications.
Replacement Considerations
Officially recommended substitutes include the 71V424S12YGI and 71V424S12PHGI. Verify pin compatibility and electrical specifications before substitution.
