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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 36SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:36-SOJ
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The 71V424S12YG8 is a 4-Mbit (512K x 8) asynchronous static random-access memory manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 3V to 3.6V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 36-pin Small Outline J-Lead (SOJ) package with a width of 0.400 inches (10.16 mm). Designed for surface-mount installation, it supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing fast data access without external clock synchronization
- CMOS technology ensuring low power consumption during operation
- Industrial-grade thermal stability supporting extended temperature environments
Applications
- High-speed data buffering in embedded systems
- Cache memory implementation in microcontroller-based designs
- Data storage in industrial control equipment
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level requirements before procurement. Check for valid replacement part numbers such as the 71V424S12PHGI if current stock is unavailable. Ensure packaging specifications match design constraints.
Selection Notes
Select this component for applications requiring 4-Mbit capacity with 12 ns speed in a 36-SOJ form factor. Ensure system voltage aligns with the 3V to 3.6V operating range. Consider the industrial temperature rating for harsh environments. Verify pin compatibility if replacing legacy IDT parts.
Part Context
This device belongs to the 71V424 series of high-performance asynchronous SRAMs. It represents a transition from Integrated Device Technology (IDT) branding to Renesas Electronics following corporate acquisitions. The SOJ package variant offers a specific footprint distinct from TSOP or BGA alternatives in the same family.
Replacement Considerations
The 71V424S12PHGI is a manufacturer-recommended substitute. Verify pinout and electrical specifications against original design requirements before substitution.
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