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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 36SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:36-SOJ
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The 71V424S12YGI is a 4-Mbit asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 512K x 8 bits and an access time of 12 ns. The device operates within a supply voltage range of 3V to 3.6V and supports surface-mount installation in a 36-BSOJ package measuring 0.400 inches (10.16mm) wide. It functions across an industrial temperature range of -40°C to 85°C.
Feature Summary
- Asynchronous parallel SRAM architecture for high-speed data access
- CMOS technology ensuring low power consumption during operation
- Industrial-grade thermal stability for reliable performance in demanding environments
Applications
- High-performance computing systems requiring fast volatile storage
- Industrial control equipment needing reliable data buffering
- Communication infrastructure utilizing parallel memory interfaces
Procurement Notes
This component has reached End-of-Life status and is no longer manufactured by Renesas Electronics Corporation. Verification of the specific part number against official discontinuation notices is essential before procurement planning. Sourcing should focus on identifying authorized replacement components or verified surplus stock from reputable distributors, as original units are unavailable through standard manufacturing channels.
Selection Notes
Designers must account for the discontinued status when selecting this component for new projects. The primary consideration is transitioning to a supported alternative that maintains electrical compatibility. Engineers should evaluate pin-to-pin replacements or functional equivalents that offer updated availability while preserving the required 12 ns access speed and 3.3V operating voltage specifications for existing system architectures.
Part Context
The 71V424S12YGI belongs to the IDT 71V424 series of asynchronous SRAMs, originally developed by Integrated Device Technology before its acquisition by Renesas. This series was designed to provide high-density, high-speed memory solutions for applications requiring rapid data retrieval. The specific suffix indicates the package type and speed grade within the broader product family.
Replacement Considerations
Renesas recommends the 71V424S12PHGI as a direct substitute for the 71V424S12YGI. This replacement maintains similar electrical characteristics but utilizes a different package configuration. Designers should verify mechanical fit and pinout compatibility when integrating the PHGI variant into existing board layouts.
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