71V424S12YGI8

Overview

The 71V424S12YGI8 is a 4-Mbit (512K x 8) asynchronous static random-access memory manufactured by Renesas Electronics Corporation. It features a parallel interface with a 12 ns access time and write cycle time. The device operates on a single 3.0 V to 3.6 V power supply and supports surface-mount installation in a 36-BSOJ package. It is rated for an industrial operating temperature range of -40°C to +85°C.

Feature Summary

• Advanced high-speed CMOS technology for efficient performance
• JEDEC center Power/GND pinout configuration to reduce noise
• Equal access and cycle times for simplified system design

Applications

• High-speed data buffering in embedded systems
• Cache memory applications in industrial controllers
• Data storage in telecommunications equipment

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level 3 handling requirements during assembly. Cross-reference datasheet revisions to ensure compatibility with existing designs.

Selection Notes

Select this part for applications requiring fast parallel SRAM with low voltage operation. Ensure the design accommodates the 36-BSOJ footprint and thermal constraints within the specified temperature range. Consider equivalent alternatives if new production volume is required.

Part Context

This component belongs to the 71V424 series of asynchronous SRAMs. It shares architectural similarities with other parts in the family but differs in speed grade and packaging options. The suffix indicates specific manufacturing and environmental compliance attributes defined by the manufacturer.

Replacement Considerations

The 71V424S12PHGI is listed as a manufacturer-recommended substitute. Verify pinout compatibility and electrical specifications before implementation.