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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:15 ns
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Overview
The IDT71V424S15PHGI is a 4-megabit (4,194,304-bit) high-speed static random-access memory (SRAM) organized as 512K words by 8 bits. Manufactured using advanced CMOS technology, this asynchronous memory device operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V. It features a maximum access time and write cycle time of 15 nanoseconds. The component utilizes a bidirectional data interface that is directly TTL-compatible and employs a JEDEC center power and ground pinout configuration to minimize noise. It is housed in a 44-lead Thin Small Outline Package (TSOP II) with a 0.4-inch width.
Feature Summary
- Utilizes advanced high-performance CMOS technology for cost-effective high-speed memory solutions.
- Features a JEDEC center power and ground pinout design to reduce electrical noise.
- Provides equal access and cycle times for consistent performance.
- Operates with a single 3.3V power supply and low power consumption via chip deselect.
Applications
- High-speed data buffering in communication systems
- Cache memory applications in embedded processors
- Industrial control system data storage
- Test and measurement equipment memory modules
Procurement Notes
Verify the specific suffix PHGI confirms the 44-pin TSOP II package and lead-free compliant status. Confirm RoHS3 compliance requirements against current manufacturing notices. Check for end-of-life announcements or production change notifications affecting availability. Ensure the 15ns speed grade matches the system timing constraints. Validate the 3.3V operating voltage range for compatibility with the target circuit design.
Selection Notes
Select this component when a 512K x 8 organization is required with 15ns latency. The 44-pin TSOP II package is suitable for surface-mount assembly where space is constrained. Consider the single 3.3V supply requirement for power management. Evaluate the bidirectional I/O capability for interface simplicity. Compare against faster speed grades if higher throughput is necessary.
Part Context
This part belongs to the IDT 71V424 family of 4Mbit SRAMs. Variants within this family differ primarily in access speed (e.g., 10ns, 12ns) and package type (SOJ vs. TSOP). The 'S' suffix typically denotes specific speed and package combinations within the Renesas/IDT portfolio. This series is designed for general-purpose high-speed memory applications requiring reliable CMOS performance.
Replacement Considerations
- 71V424S12PHGI
- 71V424L15PHGI
FAQ
What is the memory organization of the IDT71V424S15PHGI?
The memory is organized as 512K words by 8 bits, totaling 4 megabits.
Does the IDT71V424S15PHGI support TTL-compatible interfaces?
Yes, the bidirectional data inputs and outputs are directly TTL-compatible.
What is the standard power supply voltage for this device?
The device requires a single 3.3V power supply, operating within a range of 3.0V to 3.6V.
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