71V424S15YG

71V424S15YG

$3.81
  • Description:71V424 - 4 MEG (512K X 8-BIT) 3.
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:4b8da5c3f879 Category: Brand:

  
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Product Detailed Parameters

  • Description:71V424 - 4 MEG (512K X 8-BIT) 3.
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:512K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:36-SOJ
  • Access Time:15 ns

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71V424S15YG

Overview

The IDT 71V424S15YG is a 4-megabit (4Mb) asynchronous static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology. The device features a parallel interface and is organized as 512K words by 8 bits. It offers a maximum access time of 15 nanoseconds with a corresponding write cycle time of 15 nanoseconds. The component operates within a supply voltage range of 3.0 volts to 3.6 volts and supports surface-mount installation in a 36-lead Small Outline J-Lead (SOJ) package, specifically identified as 36-BSOJ with a width of 0.400 inches. The standard operating temperature range extends from 0°C to 70°C.

Feature Summary

  • Asynchronous parallel memory architecture providing independent read and write operations without external clock synchronization.

Applications

  • Data buffering in high-speed digital systems
  • Cache memory implementation for microprocessors
  • Storage for temporary data in embedded controllers

Procurement Notes

Verify the specific suffix 'YG' against current manufacturer documentation to confirm pinout compatibility and lead finish specifications. Confirm RoHS compliance status as manufacturing processes may have evolved since initial production. Check for official End-of-Life notices or Product Change Notifications that might affect long-term availability or sourcing channels.

Selection Notes

Select this component when a 4Mb capacity with 15ns speed is required in a 36-pin SOJ form factor. Ensure the design environment accommodates the 3V to 3.6V power supply requirements. Consider the commercial temperature range limits if operation outside 0°C to 70°C is necessary.

Part Context

This part belongs to the IDT 71V424 family of high-speed SRAMs. It shares the same memory density and organization as variants like the 71V424S12YG but differs in access speed performance. The 71V424 series is designed for applications requiring fast random access capabilities in compact surface-mount packages.

Replacement Considerations

The 71V424S12YG is listed as an available alternative with faster 12ns access times. Verify pin-to-pin compatibility and electrical parameter alignment before substitution.

71V424S15YG71V424S15YG
$3.81
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