71V424S15YG

Overview

The Renesas Electronics Corporation 71V424S15YG is a 4 Mbit (512K x 8) asynchronous static random-access memory (SRAM) integrated circuit. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 15 ns. The device utilizes a parallel interface and is housed in a 36-SOJ surface-mount package with a width of 10.16 mm. Designed for commercial applications, it supports an operating temperature range from 0°C to +70°C.

Feature Summary

• Asynchronous SRAM architecture requiring no clock or refresh cycles
• Single 3.3 V power supply operation
• Parallel data bus interface

Applications

• General-purpose volatile data storage
• Buffering in embedded systems
• Cache memory implementation

Procurement Notes

Verify component authenticity through authorized distributors due to potential obsolescence. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Review official product discontinuance notifications for lifecycle management. Ensure packaging specifications match design requirements.

Selection Notes

Select this component for designs requiring 4 Mbit capacity with 15 ns speed at 3.3 V. Compare against the 71V424L12YG for faster access times or different package options. Evaluate thermal performance within the commercial temperature range. Consider pinout compatibility with existing PCB layouts.

Part Context

This part belongs to the 71V424 family of high-speed asynchronous SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package configurations to support diverse memory requirements in industrial and consumer electronics applications.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V424S10YG and 71V424S15YGI.