71V547S100PF

Overview

The IDT71V547S100PF is a high-speed synchronous static random-access memory (SRAM) device manufactured by Integrated Device Technology. It features a memory organization of 128K words by 36 bits, providing a total capacity of 4.5 megabits. The device operates with a maximum clock frequency of 100 MHz and supports a data access time of 5 nanoseconds. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations. The component is designed for 3.3V power supply applications and is packaged in a standard 100-pin plastic thin quad flatpack (TQFP).

Feature Summary

• Supports high-performance system speeds through Zero Bus Turnaround technology, eliminating bus turnaround dead cycles.
• Features internally synchronized output buffer enable to simplify control logic requirements.
• Includes a burst counter supporting four-word interleaved or linear burst modes.
• Utilizes positive clock-edge triggered registers for address, data, and control signals.

Applications

• High-speed digital signal processing systems requiring low-latency memory access.
• Network infrastructure equipment utilizing ZBT SRAM for packet buffering.
• Embedded systems requiring pipelined memory architectures.
• Industrial control units needing reliable synchronous memory interfaces.

Procurement Notes

Verify the specific suffix 'PF' against the manufacturer's current datasheet to confirm package dimensions and pinout compatibility. Ensure the voltage specifications match the target system's 3.3V core and I/O requirements. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Check for any recent product change notices regarding lead content or manufacturing site changes.

Selection Notes

Select this component when a 128K x 36 configuration is required for synchronous applications. The 5 ns access time and 100 MHz clock rate suit designs needing fast data throughput without complex wait states. Consider the TQFP-100 package for surface-mount assembly constraints. Evaluate the need for ZBT features to optimize bus efficiency in bidirectional data paths compared to standard synchronous SRAMs.

Part Context

This part belongs to the IDT 71V547 family of synchronous ZBT SRAMs. These devices are engineered to replace asynchronous memories in high-speed designs while offering easier interface timing. The family typically includes variants with different access times and package options, such as BGA configurations, to accommodate various board space and performance requirements within the same logical architecture.

Replacement Considerations

Cross-reference with IDT71V547S100PFGI8 for potential pin-compatible alternatives. Verify electrical parameters against Renesas Electronics equivalents following the acquisition of IDT assets. Ensure substitute parts maintain the 128K x 36 organization and 100 MHz speed grade.