71V547S75PFG

71V547S75PFG

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:d8ba611ae07c Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:7.5 ns

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71V547S75PFG

Overview

The 71V547S75PFG is a synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36 bits, providing a total capacity of 4.5 Mbit. The component supports a maximum clock frequency of 133 MHz with a typical access time of 7.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-pin TQFP package.

Feature Summary

  • Supports high-speed synchronous data transfer via ZBT technology
  • Provides flow-through architecture for continuous data processing
  • Compatible with standard 3.3V logic interfaces

Applications

  • High-performance embedded systems requiring fast data buffering
  • Industrial equipment control units
  • Network infrastructure hardware

Procurement Notes

Verify the specific suffix 'PFG' against the manufacturer's current datasheet to confirm pinout and package dimensions. Confirm availability status as this part may be discontinued or subject to long lead times. Ensure compatibility with existing board layouts before procurement.

Selection Notes

Select this component when a 36-bit wide interface is required for system bus alignment. Consider the 7.5 ns access speed for applications demanding low-latency memory operations. Evaluate power consumption requirements against the specified operating voltage range.

Part Context

This device belongs to the 71V547 series of synchronous SRAMs designed for high-throughput applications. It utilizes Zero Bus Turnaround (ZBT) technology to maximize bandwidth efficiency compared to traditional synchronous memories.

Replacement Considerations

The 71V547S100PFGI8 is listed as a similar alternative. Verify electrical specifications and package compatibility before substitution.

71V547S75PFG71V547S75PFG

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