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71V632S6PFGI
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Product Detailed Parameters
- Description：IC SRAM 2MBIT PARALLEL 100TQFP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR
- Memory Size：2Mbit
- Memory Organization：64K x 32
- Memory Interface：Parallel
- Clock Frequency：83 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.63V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：100-LQFP
- Supplier Device Package：100-TQFP (14x14)
- Access Time：6 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics Corporation 71V632S6PFGI is a synchronous single data rate static random access memory (SRAM) IC. It features a storage capacity of 2 Mbit organized as 64K x 32 bits. The device supports a maximum clock frequency of 83 MHz with an access time of 6 ns. It operates on a parallel interface and requires a supply voltage between 3.135 V and 3.63 V, with a maximum power current of 180 mA. The component is housed in a 100-TQFP package and functions within a temperature range of -40°C to +85°C.
Feature Summary
- Synchronous pipeline burst architecture for high-speed data transfer
- Single data rate operation optimized for real-time processing
- Parallel interface supporting standard system integration
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment control units
- Network infrastructure hardware
Procurement Notes
Verify the exact suffix configuration against official datasheets, as variations may exist. Confirm RoHS compliance status and moisture sensitivity level requirements before procurement. Check for obsolescence notices or lifecycle changes directly from Renesas Electronics. Ensure ESD protection protocols are followed during handling due to semiconductor sensitivity.
Selection Notes
Select this component when synchronous SRAM performance is required over asynchronous alternatives. The 6 ns access time and 83 MHz clock speed suit applications demanding low latency. Ensure the design accommodates the 100-pin TQFP footprint and thermal dissipation needs under the specified voltage and current parameters.
Part Context
This part belongs to the 71V632 series of synchronous SRAMs manufactured by Renesas Electronics. It serves as a high-speed memory solution for digital signal processing and microcontroller-based systems. The series is designed to provide reliable data retention and fast read/write cycles in compact surface-mount packages.
Replacement Considerations
The IDT71V632S6PFI8 is a confirmed substitute part number for this component. Verify pin compatibility and electrical specifications before substitution.
