71V65603S100BG

71V65603S100BG

$18.50
  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:890e1e025dae Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns

Download product information

71V65603S100BG

Overview

The 71V65603S100BG is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It features a memory organization of 256K x 36 bits and utilizes a parallel interface. The device supports a maximum clock frequency of 100 MHz with an access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and has a maximum power current of 270 mA. The component is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface mount installation. It functions reliably across a temperature range of 0°C to +70°C.

Feature Summary

  • Supports synchronous single data rate operations with pipelined architecture
  • Eliminates dead bus cycles during read-to-write or write-to-read transitions
  • Compatible with standard 3.3V logic levels

Applications

  • High-performance processor secondary cache systems
  • Network infrastructure equipment requiring fast data buffering
  • Industrial control systems needing reliable synchronous memory

Procurement Notes

Verify the specific suffix 'BG' against official Renesas documentation to confirm the exact package type and temperature grade. Confirm RoHS compliance status as historical records may vary. Check for active obsolescence notices or product change notifications prior to finalizing procurement plans.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required at 100 MHz speeds. Ensure the design accommodates the 119-pin PBGA footprint and thermal requirements. Verify that the system power supply strictly maintains the 3.135V to 3.465V operating window for stable performance.

Part Context

This part belongs to the 71V65603S series of ZBT (Zero Bus Turnaround) synchronous SRAMs. It is functionally equivalent to the IDT71V65603S100BGI under Renesas ownership. The series is designed for applications demanding high-speed data throughput with minimal latency between bus transactions.

Replacement Considerations

The IDT71V65603S100BGI is a confirmed substitute part number from the same manufacturer lineage.

71V65603S100BG71V65603S100BG
$18.50
Buy Now