71V65603S100BG8

Overview

The Renesas Electronics Corporation 71V65603S100BG8 is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It features a storage capacity of 9 megabits organized as 256K by 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters. It supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

• Zero bus turnaround architecture eliminates dead bus cycles during read-to-write or write-to-read transitions, enhancing system throughput efficiency.
• Pipeline architecture incorporates address, data-in, and control signal registers to optimize high-speed data handling capabilities.
• Flow-through output configuration allows direct data availability without additional output registration delays for faster processing.

Applications

• High-performance computing systems requiring fast data buffering
• Industrial equipment control units needing reliable volatile memory
• Network infrastructure devices utilizing parallel SRAM interfaces

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level 3 handling requirements. Check for specific packaging variations such as tape and reel versus tray formats. Ensure compatibility with existing PCB footprints for the 119-PBGA package. Review product change notices for any substrate or labeling updates affecting integration.

Selection Notes

Select this component when a 36-bit wide parallel interface is required for synchronous memory applications. Consider the 100 MHz speed grade and 5 ns access time against system timing constraints. Evaluate the 119-PBGA package dimensions for board space limitations. Compare power consumption characteristics at 3.3V operation against alternative memory solutions. Assess thermal performance within the specified commercial temperature range.

Part Context

This part belongs to the IDT 71V65603/Z series of zero bus turnaround synchronous SRAMs. It shares architectural similarities with other members like the 71V65803 but differs in data width organization. The series is designed for embedded applications demanding high bandwidth and low latency. Manufacturing follows Renesas Electronics standards for CMOS SRAM technology.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65603S100PFGI and 71V65603S100BG. Verify pinout compatibility and electrical specifications before substitution. Note that alternative packages may require adapter solutions or PCB redesigns.