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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:5 ns
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Overview
The 71V65603S100BQG8 is a synchronous ZBT SRAM manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 256K x 36. The device supports a maximum clock frequency of 100 MHz with an access time of 5 ns. It operates on a single 3.3V power supply, ranging from 3.135V to 3.465V. The component utilizes a parallel interface and is housed in a 165-CABGA package measuring 13x15 mm. It is designed for surface mount installation and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Eliminates dead bus cycles during read-to-write or write-to-read transitions using Zero Bus Turnaround (ZBT) technology.
- Integrates address, data-in, and control signal registers to support high-speed synchronous operations.
- Provides pipelined outputs to maintain continuous data throughput during burst mode accesses.
Applications
- High-performance processor secondary cache systems
- Network routing equipment requiring fast memory access
- Industrial automation controllers
Procurement Notes
Verify the specific suffix BQG8 against official Renesas documentation to confirm the exact package dimensions and moisture sensitivity level. Confirm RoHS compliance status directly with the manufacturer, as legacy listings may vary. Check for active production status or obsolescence notices prior to procurement planning.
Selection Notes
Select this component when a 36-bit wide data path is required for system architecture compatibility. Ensure the design accommodates the 165-pin CABGA footprint and thermal requirements. Verify that the 3.3V core voltage aligns with the target board's power distribution network constraints.
Part Context
This part belongs to the 71V65603 series of 3.3V Synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71V65603S100BGI but differs in package type and specific manufacturing lot details. The series is characterized by its ability to bridge asynchronous and synchronous memory domains efficiently.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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