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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:5 ns
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Overview
The 71V65603S100BQGI is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device supports a maximum clock frequency of 100 MHz with a typical access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and features a parallel interface. The component is housed in a 165-CABGA package measuring 13x15 mm and is rated for an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Supports synchronous single data rate (SDR) operations with pipelined architecture for high-speed data throughput.
- Features a 36-bit wide data interface suitable for applications requiring high bandwidth per cycle.
- Operates on a standard 3.3 V power supply with defined voltage tolerance limits.
Applications
- High-performance computing systems requiring fast cache memory
- Network infrastructure equipment needing low-latency data buffering
- Industrial control systems utilizing surface-mount technology
Procurement Notes
Verify the current lifecycle status before procurement, as this specific part number may be subject to end-of-life notices or discontinuation. Confirm that the 165-CABGA package dimensions align with your printed circuit board layout constraints. Ensure compatibility with the required 3.3 V logic levels and check for any moisture sensitivity handling requirements during assembly.
Selection Notes
Select this component when a 9 Mbit synchronous SRAM with a 36-bit word width is required. It is appropriate for designs needing 100 MHz operation speeds and robust industrial temperature performance. Consider the 165-CABGA package size for space-constrained applications. Verify that the system design can accommodate the specified power supply voltage range and current consumption profiles.
Part Context
This device belongs to the 71V65603 series of synchronous SRAMs from Renesas Electronics. The series typically offers various speed grades and package options to suit different performance and form-factor requirements. The 71V65603S100BQGI specifically denotes the 100 MHz speed grade in the 165-CABGA package. This family is designed for applications demanding reliable, high-speed volatile memory solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Check for alternative speed grades within the same series or packages from other manufacturers if this specific variant is unavailable.
FAQ
What is the memory organization of the 71V65603S100BQGI?
The memory is organized as 256K words by 36 bits, providing a total capacity of 9 Mbit.
Does the 71V65603S100BQGI support asynchronous operations?
No, it is a synchronous SRAM that requires a clock signal for data input and output operations.
What is the maximum operating temperature for this component?
The maximum operating temperature is +85°C.
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